Datasheet Details
| Part number | 2SD2015 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.11 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2015-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor 2SD2015.
| Part number | 2SD2015 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.11 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2015-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver of solenoid, relay and motor, and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 2mA VBE(sat) Base-Emitter Saturation Voltage IC= 2A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2015 | Silicon NPN Transistor | Sanken electric |
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2SD2015 | SILICON POWER TRANSISTOR | SavantIC |
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| 2SD2000 | NPN Transistor |
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