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2SD2015 - NPN Transistor

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Part number 2SD2015
Manufacturer INCHANGE
File Size 206.11 KB
Description NPN Transistor
Datasheet download datasheet 2SD2015 Datasheet
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver of solenoid, relay and motor, and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Co

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