2SD2016 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1A ·High DC Current Gain.
- Part: 2SD2016
- Manufacturer: Inchange Semiconductor (official site)
- Size: 206.49 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
Sanken |
2SD2016 | Silicon NPN Transistor |