| Part number | 2SD2016 |
|---|---|
| Datasheet | 2SD2016-INCHANGE.pdf |
| File Size | 206.49 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1A ·High DC Current Gain.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD2016 | Silicon NPN Transistor | Sanken electric |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD201 | NPN Transistor |
| 2SD2012 | NPN Transistor |
| 2SD2014 | NPN Transistor |
| 2SD2015 | NPN Transistor |
| 2SD2017 | NPN Transistor |
| 2SD200 | NPN Transistor |
| 2SD2000 | NPN Transistor |
| 2SD2001 | NPN Transistor |
| 2SD2020 | NPN Transistor |
| 2SD2021 | NPN Transistor |
