Datasheet Details
| Part number | 2SD2016 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.49 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2016-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD2016 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.49 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2016-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1A ·High DC Current Gain : hFE= 1000(Min) @ IC= 1A, VCE= 4V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter, relay and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2016 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2016 | Silicon NPN Transistor | Sanken electric |
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