Datasheet Details
| Part number | 2SD2012 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.20 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2012-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2012.
| Part number | 2SD2012 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.20 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2012-INCHANGE.pdf |
|
|
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·High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Voltage- : VCE(sat)= 1.0V (Max) ·High Power Dissipation : PC= 25 W(Max)@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 2.0 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2012 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2012 | NPN Transistor | Toshiba Semiconductor |
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2SD2012 | NPN Silicon Power Transistor | STMicroelectronics |
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2SD2012 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SD2012 | NPN Silicon Power Transistors | MCC |
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