High DC Current Gain-
: hFE= 100 (Min)@ IC= 0.5A
Low Saturation Voltage-
: VCE(sat)= 1.0V (Max)
High Power Dissipation
: PC= 25 W(Max)@ TC= 25℃
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio frequency power
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SD2012
DESCRIPTION ·High DC Current Gain-
: hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Voltage-
: VCE(sat)= 1.0V (Max) ·High Power Dissipation
: PC= 25 W(Max)@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
0.5
A
2.
2SD2012 Datasheet
