Download 2SD2012 Datasheet PDF
2SD2012 page 2
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Datasheet Summary

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION - High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A - Low Saturation Voltage- : VCE(sat)= 1.0V (Max) - High Power Dissipation : PC= 25 W(Max)@ TC= 25℃ - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for audio frequency power amplifier...