2SD2012 Overview
hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Voltage- : VCE(sat)= 1.0V (Max) ·High Power Dissipation : 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2012 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.


