High DC Current Gain-
: hFE = 1000(Min)@ IC= 1A
Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1A
Incorporating a built-in zener diode
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Low-frequency power a
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isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD2091
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 1A ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Low-frequency power amplifier amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80-110
V
VCEO
Collector-Emitter Voltage
80-110
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2
A
ICM
Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
20
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.
2SD2091 Datasheet
