2SD2091 Overview
hFE = 1000(Min)@ IC= 1A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low-frequency power amplifier amplifications. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2091 TC=25℃ unless otherwise...
