Datasheet4U Logo Datasheet4U.com

2SD2091 - NPN Transistor

Datasheet Summary

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= 1A Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A Incorporating a built-in zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low-frequency power a

📥 Download Datasheet

Datasheet preview – 2SD2091

Datasheet Details

Part number 2SD2091
Manufacturer INCHANGE
File Size 185.83 KB
Description NPN Transistor
Datasheet download datasheet 2SD2091 Datasheet
Additional preview pages of the 2SD2091 datasheet.

📁 Similar Datasheet

  • 2SD2091 - NPN Transistor (Rohm)
  • 2SD2092 - NPN TRANSISTOR (Toshiba Semiconductor)
  • 2SD2093 - NPN Triple Diffused Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD2093 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD2094 - Power Transistor (Inchange Semiconductor)
  • 2SD2095 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD2095 - Silicon NPN Power Transistors (Inchange Semiconductor)
  • 2SD2096 - NPN Transistor (Rohm)
  • 2SD2097 - Transistor (Rohm)
  • 2SD2098 - NPN Transistor (Rohm)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2091 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low-frequency power amplifier amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80-110 V VCEO Collector-Emitter Voltage 80-110 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
Published: |