2SD2079 Datasheet - Toshiba Semiconductor

2SD2079 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2079 2SD2079 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm High DC current gain: hFE (1) = 2000 (min) Low saturation voltage: VCE (sat) (1) = 1.5 V (max) Complementary to 2SB1381. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pul.

2SD2079_ToshibaSemiconductor.pdf