2SD2107 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min). Low Collector Saturation Voltage. Minimum Lot-to-Lot variations for robust de.

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Datasheet Specifications

Part number: 2SD2107
Manufacturer: INCHANGE
File Size: 194.30 KB
Datasheet: 2SD2107-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Curre

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2SD2107 NPN Transistor INCHANGE

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