Datasheet Details
- Part number
- 2SD2107
- Manufacturer
- INCHANGE
- File Size
- 194.30 KB
- Datasheet
- 2SD2107-INCHANGE.pdf
- Description
- NPN Transistor
2SD2107 Description
isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min).
Low Collector Saturation Voltage.
Minimum Lot-to-Lot variations for robust de.
2SD2107 Applications
* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Curre
📁 Related Datasheet
📌 All Tags