Datasheet4U Logo Datasheet4U.com

2SD2107 - NPN Transistor

2SD2107 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min). Low Collector Saturation Voltage. Minimum Lot-to-Lot variations for robust de.

2SD2107 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Curre

📥 Download Datasheet

Preview of 2SD2107 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD2107
Manufacturer
INCHANGE
File Size
194.30 KB
Datasheet
2SD2107-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD2100 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD2101 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2102 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD2103 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2104 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2105 - Silicon NPN Transistor (Hitachi)
  • 2SD2106 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2108 - Silicon NPN Transistor (Hitachi Semiconductor)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD2107-like datasheet