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2SD211 - NPN Transistor

2SD211 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD211 .
Excellent Safe Operating Area. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min. Low Collector Saturation Voltage. High Sw.

2SD211 Applications

* Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICP Collector Cu

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Datasheet Details

Part number
2SD211
Manufacturer
INCHANGE
File Size
189.15 KB
Datasheet
2SD211-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD211-like datasheet