Datasheet Details
| Part number | 2SD2108 | 
|---|---|
| Manufacturer | INCHANGE | 
| File Size | 194.53 KB | 
| Description | NPN Transistor | 
| Datasheet |  2SD2108-INCHANGE.pdf | 
 
		  | Part number | 2SD2108 | 
|---|---|
| Manufacturer | INCHANGE | 
| File Size | 194.53 KB | 
| Description | NPN Transistor | 
| Datasheet |  2SD2108-INCHANGE.pdf | 
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80
📁 2SD2108 Similar Datasheet