Datasheet Details
| Part number | 2SD2108 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 194.53 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD2108-INCHANGE.pdf
|
| Part number | 2SD2108 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 194.53 KB |
| Description | NPN Transistor |
| Datasheet |
2SD2108-INCHANGE.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80
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