Datasheet4U Logo Datasheet4U.com

2SD2144S Datasheet - Rohm

2SD2144S High-current Gain Medium Power Transistor

2SD2144S Features

* 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-232-C107) 232 Transistors FAbsolute maximum rat

2SD2144S Datasheet (124.29 KB)

Preview of 2SD2144S PDF
2SD2144S Datasheet Preview Page 2 2SD2144S Datasheet Preview Page 3

Datasheet Details

Part number:

2SD2144S

Manufacturer:

ROHM ↗

File Size:

124.29 KB

Description:

High-current gain medium power transistor.

📁 Related Datasheet

2SD2144 High-current Gain Medium Power Transistor (Rohm)

2SD214 NPN Transistor (INCHANGE)

2SD2140 Power Transistor (Inchange Semiconductor)

2SD2141 NPN Transistor (INCHANGE)

2SD2141 Silicon NPN Transistor (Sanken electric)

2SD2142 Silicon NPN Transistor (GME)

2SD2142 NPN Transistor (SeCoS Halbleitertechnologie GmbH)

2SD2142 NPN Transistor (JinYu)

TAGS

2SD2144S High-current Gain Medium Power Transistor Rohm

2SD2144S Distributor