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2SD2144S Datasheet - Rohm

2SD2144S High-current Gain Medium Power Transistor

2SD2144S Features

* 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-232-C107) 232 Transistors FAbsolute maximum rat

2SD2144S_Rohm.pdf

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Datasheet Details

Part number:

2SD2144S

Manufacturer:

ROHM ↗

File Size:

124.29 KB

Description:

High-current gain medium power transistor.

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2SD2144S 2SD2144S High-current Gain Medium Power Transistor Rohm

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