Datasheet4U Logo Datasheet4U.com

2SD2128 - Power Transistor

📥 Download Datasheet

Preview of 2SD2128 PDF
datasheet Preview Page 2

2SD2128 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 1.5A High DC Current Gain : hFE= 1000(Min) @ IC= 1.5A, VCE= 3V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage

📁 2SD2128 Similar Datasheet

  • 2SD2120 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SD2121 - Silicon NPN Epitaxial Planar Transistor (Hitachi Semiconductor)
  • 2SD2121L - Silicon NPN Epitaxial Planar Transistor (Hitachi Semiconductor)
  • 2SD2121S - Silicon NPN Epitaxial Planar Transistor (Hitachi Semiconductor)
  • 2SD2122 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2122L - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2122S - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2123 - Silicon NPN Transistor (Hitachi Semiconductor)
Other Datasheets by Inchange Semiconductor
Published: |