2SD2115S
Hitachi Semiconductor
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Silicon npn transistor.
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2SD2115 - Silicon NPN Epitaxial Planar Transistor
(Hitachi Semiconductor)
2SD2115(L)/(S)
Silicon NPN Epitaxial Planar
Application
Low frequency power amplifier
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector.
2SD2115L - Silicon NPN Transistor
(Hitachi Semiconductor)
2SD2115(L)/(S)
Silicon NPN Epitaxial Planar
Application
Low frequency power amplifier
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector.
2SD211 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD211
..
DESCRIPTION ·With TO-3 package ·Large curre.
2SD211 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD211
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage-
: V.
2SD2110 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
2SD2110
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Collector-Emitter Satura.
2SD2111 - Silicon NPN Transistor
(Hitachi Semiconductor)
..
2SD2111
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
2
1 1. Base 2. Collector 3. Em.
2SD2111 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Vol.
2SD2112 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Vol.
2SD2113 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Volt.
2SD2114 - NPN Transistor
(JCST)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
2SD2114 TRANSISTOR (NPN)
FEATURES z High DC current gain. z.
