2SD2015 Datasheet - INCHANGE

Datasheet Details

Part number:

2SD2015

Manufacturer:

INCHANGE

File Size:

206.11 KB

Description:

NPN Transistor

isc Silicon NPN Darlington Power Transistor 2SD2015 DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A *High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V *Minimum Lot-to-Lot variations f

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2SD2015, NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A *High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS <

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