Datasheet Details
Part number:
2SD2017
Manufacturer:
INCHANGE
File Size:
205.44 KB
Description:
NPN Transistor
isc Silicon NPN Darlington Power Transistor 2SD2017 DESCRIPTION *High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A *High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V *Minimum Lot-to-Lot variati
