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2SD2017 Datasheet - INCHANGE

2SD2017 NPN Transistor

*High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A *High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI.

2SD2017-INCHANGE.pdf

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Datasheet Details

Part number:

2SD2017

Manufacturer:

INCHANGE

File Size:

205.44 KB

Description:

Npn transistor.

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