2SD1758 Datasheet - Rohm

2SD1758 Medium Power Transistor

2SD1758 Features

* 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240

* Structure Epitaxial planar type NPN silicon transistor 0.5±0.1

* Dimensions (Unit : mm) 2SD1766 4.5+

* 00..21 1.6±0.1 1.5 +0.2

* 0.1 2SD1758 6.5±0.2 5.1+

* 00.

Datasheet Details

2SD1758

166.47 KB

Medium power transistor.

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2SD1758 Medium Power Transistor Rohm

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