2SD1758 - Medium Power Transistor

Rohm

Datasheet Details

1) Low VCE(sat). VCE(sat) = 0.5V (Typ. ) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240.
Structure Epitaxial planar type NPN silicon transistor 0.5±0.1.
Dimensions (Unit : mm) 2SD1766 4.5+.
00..21 1.6±0.1 1.5 +0.2.
0.1 2SD1758 6.5±0.2 5.1+.
00..21 C0.5 2.3+.
00..21 0.5±0.1 5.5+.
00..31 1.5±0.3 0.9 1.5 2.5 9.5±0.5 4.0±0.3 2.5+.
00..21 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 0.4 +0.

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Published: Apr 3, 2005 |