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Power Transistors
2SD1752, 2SD1752A
Silicon NPN epitaxial planar type
For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A
q q q q q
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm
Low collector to emitter saturation voltage VCE(sat) High-speed switching Satisfactory linearity of foward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 40 50 20 40 5 20 10 15 1.3 150 –55 to +150 Unit V
7.2±0.3
0.8±0.2
s Features
1.1±0.1
0.85±0.1 0.4±0.1
1.0±0.2
10.0 –0.
+0.3
0.75±0.1
2.3±0.2 4.6±0.
2SD1752 Datasheet
