Galaxy Century Microelectronics 2SD1757
Silicon Epitaxial Planar Transistor
| Part No. | 2SD1757 |
|---|---|
| Datasheet | 2SD1757 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● Low VCE(sat).(Typ.8mV at IC/IB=10/1mA).● Optimal for muting.
● Power dissipation.PD=200mW. Pb Lead-free Production specification 2SD1757
APPLICATIONS
● Audio frequency general. ORDERING INFORMATION Type No. Marking 2SD1757 AAQ/AAR/AAS SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEO Collector-Emitter Voltage 15 VEBO Emitter-Base Voltage 6.5 IC Collector Current -Continuous 500 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C156 Rev.A 1 Production specification Silicon Epitaxial Planar Transistor 2SD1757ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,
