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2SD1757 - Silicon Epitaxial Planar Transistor

Key Features

  • Low VCE(sat). (Typ.8mV at IC/IB=10/1mA).
  • Optimal for muting.
  • Power dissipation. PD=200mW. Pb Lead-free Production specification 2SD1757.

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Silicon Epitaxial Planar Transistor FEATURES  Low VCE(sat).(Typ.8mV at IC/IB=10/1mA).  Optimal for muting.  Power dissipation.PD=200mW. Pb Lead-free Production specification 2SD1757 APPLICATIONS  Audio frequency general. ORDERING INFORMATION Type No. Marking 2SD1757 AAQ/AAR/AAS SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEO Collector-Emitter Voltage 15 VEBO Emitter-Base Voltage 6.5 IC Collector Current -Continuous 500 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C156 Rev.A www.gmesemi.