Datasheet Details
| Part number | 2SD1758 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 227.69 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1758-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1758.
| Part number | 2SD1758 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 227.69 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1758-InchangeSemiconductor.pdf |
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·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Typ)@ IC= 2A ·plement to Type 2SB1182 ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation Junction Temperature 40 V 32 V 5 V 2 A 2.5 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1758 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 200mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1758 | Medium Power Transistor | GME |
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2SD1758 | NPN Transistor | JCST |
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2SD1758 | Medium Power Transistor | Rohm |
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2SD1758 | Plastic-Encapsulated Transistors | TRANSYS |
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2SD1758 | NPN Transistors | Kexin |
| Part Number | Description |
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| 2SD1756 | Power Transistor |
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| 2SD1711 | Silicon NPN Power Transistors |
| 2SD1713 | Power Transistor |
| 2SD1714 | Power Transistor |
| 2SD1716 | Power Transistor |
| 2SD1720 | Power Transistor |
| 2SD1727 | Power Transistor |
| 2SD1728 | Power Transistor |