2SD1758 - Medium Power Transistor

Galaxy Microelectronics

Key Features

Low VCE(sat). VCE(sat)=0.5V(Typ. ) (IC/IB=2A/0.2A).
Complements the 2SB1182.

2SD1758 medium power transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2SD1758
Manufacturer	Galaxy Microelectronics
File Size	238.09 KB
Description	Medium Power Transistor
Datasheet	2SD1758 Datasheet

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Other Datasheets by Galaxy Microelectronics

Part Number	Description
2SD1757	Silicon Epitaxial Planar Transistor
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2SD1782	Medium Power Transistor

Full PDF Text Transcription (Reference)

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Medium Power Transistor FEATURES  Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)  Complements the 2SB1182. APPLICATIONS  Epitaxial planar type.  NPN silicon transistor. Pb Lead-free Production specification 2SD1758 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5V IC Collector Current(DC) 2A ICP Collector Current(Pulse) 2.5 A IB Base Current 1A PC Collector Power Dissipation 2W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ W016 Rev.A www.gmesemi.