2SD1758 Overview
Medium Power.
2SD1758 Key Features
- Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)
- plements the 2SB1182
| Part number | 2SD1758 |
|---|---|
| Datasheet | 2SD1758-GME.pdf |
| File Size | 238.09 KB |
| Manufacturer | Galaxy Microelectronics |
| Description | Medium Power Transistor |
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Medium Power.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SD1758 | NPN Transistor | JCST |
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2SD1758 | Medium Power Transistor | Rohm |
| 2SD1758 | Silicon NPN Power Transistor | Inchange Semiconductor | |
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2SD1758 | Plastic-Encapsulated Transistors | TRANSYS |
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2SD1758 | NPN Transistors | Kexin |
See all Galaxy Microelectronics datasheets
| Part Number | Description |
|---|---|
| 2SD1757 | Silicon Epitaxial Planar Transistor |
| 2SD1760 | NPN Silicon Epitaxial Planar Transistor |
| 2SD1762 | Power Transistor |
| 2SD1766 | NPN Silicon Epitaxial Planar Transistor |
| 2SD1767 | Medium power transistor |
| 2SD1782 | NPN Silicon Epitaxial Planar Transistor |
| 2SD1005 | NPN SILICON EPITAXIAL TRANSISTOR |
| 2SD1088 | High Voltage Darlington Power Transistors |
| 2SD1119 | Silicon NPN Transistor |
| 2SD1616A | NPN Silicon Epitaxial Planar Transistor |