2SD1758
2SD1758 is Medium Power Transistor manufactured by Galaxy Microelectronics.
Medium Power Transistor
Features
- Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)
- plements the 2SB1182.
APPLICATIONS
- Epitaxial planar type.
- NPN silicon transistor.
Pb
Lead-free
Production specification
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
40 V
VCEO
Collector-Emitter Voltage
32 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current(DC)
2A
ICP Collector Current(Pulse)
2.5 A
IB Base...
