2SD1758 - Plastic-Encapsulated Transistors

TRANSYS

Key Features

Power dissipation PCM: 2 W (Tamb=25℃) 1. BASE 2.

2SD1758 plastic-encapsulated transistors by TRANSYS - Datasheet Preview

Datasheet Details

Part number	2SD1758
Manufacturer	TRANSYS
File Size	76.20 KB
Description	Plastic-Encapsulated Transistors
Datasheet	2SD1758 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SD1758	Medium Power Transistor	GME
2SD1758	NPN Transistor	JCST
2SD1758	Medium Power Transistor	Rohm
2SD1758	Silicon NPN Power Transistor	Inchange Semiconductor
2SD1758	Medium Power Transistor	Guangdong Kexin Industrial

Other Datasheets by TRANSYS

Part Number	Description
2SD1802	NPN Transistor
2SD2118	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Transys Electronics L I M I T E D www.DataSheet4U.com TO-252-2 Plastic-Encapsulated Transistors 2SD1758 TO-252-2 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER Collector current 2 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) 1 2 3 unless otherwise specified) Test conditions MIN 40 32 5 1 1 82 390 0.