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2SD1756 - Power Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 170V(Min) High DC Current Gain : hFE= 1500(Min) @IC= 5A Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage high current

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 170V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 5A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage high current amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1756 isc website：www.iscsemi.