Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For power amplification plementary to 2SB1170
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm s Features q q
- 0.
+0.3
7.2±0.3
0.8±0.2
1.1±0.1
0.85±0.1 0.4±0.1 q
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 60 60 6 4 2 15 1.3 150
- 55 to +150 Unit V
1.0±0.2
0.75±0.1
2.3±0.2 4.6±0.4 1 2 3 s...