Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
7.2±0.3 0.8±0.2
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm
1.0±0.2 q q q
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 200 150 6 2.5 1 0.1 15 1.3 150
- 55 to +150 Unit V V
10.2±0.3
- 0.
+0.3 s Features
1.1±0.1 0.75±0.1
0.85±0.1 0.4±0.1
2.3±0.2 4.6±0.4 1 2 3 s...