2SD1760 - Power Transistor
2SD1760 Features
* 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243.
* Structure Epitaxial planar type NPN silicon transistor
* Dimensions (Unit : mm) 2SD1760 6.5±0.2 5.1 +0.2
* 0.1 C0.5 2.3 +0.2
* 0.1 0.5±0.1 2SD1864 6.8±0.2 2.5±0.2 1.5±0
