Part number:
2SD1760
Manufacturer:
File Size:
167.18 KB
Description:
Power transistor.
* 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243.
* Structure Epitaxial planar type NPN silicon transistor
* Dimensions (Unit : mm) 2SD1760 6.5±0.2 5.1 +0.2
* 0.1 C0.5 2.3 +0.2
* 0.1 0.5±0.1 2SD1864 6.8±0.2 2.5±0.2 1.5±0
2SD1760
167.18 KB
Power transistor.
📁 Related Datasheet
2SD1760 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1760
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Typ)@ IC= 2A ·Comple.
2SD1760 - Power Transistor
(GME)
Power Transistor
FEATURES
Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)
Complements the 2SB1184.
APPLICATIONS
Epitaxial planar type. NPN s.
2SD1760 - NPN Epitaxial Planar Silicon Transistor
(SeCoS)
Elektronische Bauelemente
2SD1760
3A , 60V NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-.
2SD1760 - NPN Transistors
(Kexin)
SMD Type
NPN Transistors 2SD1760
Transistors
■ Features
● Low VCE (sat) ● Complementary to 2SB1184
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30 +0.1.
2SD1761 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1761
..
DESCRIPTION ·With TO-220Fa package ·Low co.
2SD1761 - Silicon NPN Power Transistors
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Wide Area of Safe Operation ·Complement to .
2SD1762 - Power Transistor
(Rohm)
Transistors
Power Transistor (50V, 3A)
2SD1760 / 2SD1864 / 2SD1762
FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complem.
2SD1762 - Power Transistor
(GME)
Power Transistor(50V,3A )
FEATURES
Low VCE(sat) VCE(sat)=0.5V(Typ)（IC/IB=2A/0.2A）
Complements the 2SB1185.
Pb
Lead-free
Production specification.
