* q q 10.0
* 0. +0.3 7.2±0.3 0.8±0.2 1.1±0.1 0.85±0.1 0.4±0.1 q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of
2SD1751
Panasonic Semiconductor
49.00 KB
Silicon npn triple diffusion planar type transistor.
Power Transistors
2SD1751
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1170
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm.
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(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 170V(Min) ·High DC Current Gain
: hFE= 15.
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