2SD1756 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 170V(Min). High DC Current Gain : hFE= 1500(Min) @IC= 5A. Low Collector Saturation Vol.

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Datasheet Specifications

Part number: 2SD1756
Manufacturer: Inchange Semiconductor
File Size: 210.23 KB
Datasheet: 2SD1756_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for high voltage high current amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collec

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2SD1756 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1756-like datasheet