Power Transistors 2SD1753 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 7.2±0.3 0.8±0.2 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm 1.0±0.2 q q q High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
(TC=25˚C) Ratings 200 150 6 2.5 1 0.1 15 1.3 150 55 to +150 Unit
2SD1753 Features
* 1.1±0.1 0.75±0.1 0.85±0.1 0.4±0.1 2.3±0.2 4.6±0.4 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Stora
2SD1753_PanasonicSemiconductor.pdf
Datasheet Details
2SD1753
Panasonic Semiconductor
48.47 KB
Silicon npn triple diffusion planar type transistor.
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