Part number:
2SD1088
Manufacturer:
GME
File Size:
202.66 KB
Description:
High voltage darlington power transistors.
* Collector-emitter Sustaining Voltage VCEO(SUS)=250V(Min).
* Collector-Emitter Saturation Voltage VCE(sat0=2V(Max)@IC=4A,IB=40mA.
* High DC Current Gain hFE=2000(Min)@IC=2A,VCE=2V. Pb Lead-free Production specification 2SD1088 TO-220AB MAXIMUM RATING operating temperature range appl
2SD1088
GME
202.66 KB
High voltage darlington power transistors.
📁 Related Datasheet
2SD108 NPN Transistor (INCHANGE)
2SD1083 NPN Transistor (ETC)
2SD1085 Silicon NPN Transistor (Hitachi)
2SD1085K Silicon NPN Transistor (Hitachi)
2SD1087 Silicon NPN Transistor (Toshiba)
2SD1088 NPN Transistor (Toshiba)
2SD1088 NPN Transistor (INCHANGE)
2SD1088 SILICON POWER TRANSISTOR (SavantIC)
2SD1000 NPN TRANSISTOR (NEC)
2SD1000 NPN Silicon Epitaxial Transistor (Kexin)
