2SD1169
ETC
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Si npn triple diffused plannar transistor.
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2SD1160 - NPN TRANSISTOR
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SD1160
Switching Applications Suitable for Motor Drive Applications
2SD1160
Unit: mm
• .
2SD1162 - Silicon NPN Darlington Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
2SD1162
DESCRIPTION ·High DC Current Gain-
: hFE= 400(Min.)@IC= 2A ·High Switching Speed ·Low Collector .
2SD1163 - NPN TRANSISTOR
(Hitachi Semiconductor)
2SD1163, 2SD1163A
Silicon NPN Triple Diffused
Application
TV horizontal deflection output
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3..
2SD1163 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter BreakdownVoltage-
: V(BR)CEO= 120V(Min.) ·Minimum Lot-to-L.
2SD1163 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1163,2SD1163A
·Wit
..
DESCRIPTION h TO-220 package.
2SD1163 - Silicon NPN Transistor
(Renesas)
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
Th.
2SD1163 - NPN Silicon Epitaxial Power Transistor
(Thinki Semiconductor)
2SD1163/2SD1163A
®
Pb Free Plating Product
2SD1163/2SD1163A
Pb
NPN Silicon Epitaxial Power Transistor
FEATURES:
* Medium Power Linear Switching A.
2SD1163A - NPN TRANSISTOR
(Hitachi Semiconductor)
2SD1163, 2SD1163A
Silicon NPN Triple Diffused
Application
TV horizontal deflection output
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3..
2SD1163A - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·100% avalanche t.
2SD1163A - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1163,2SD1163A
·Wit
..
DESCRIPTION h TO-220 package.
