2SD1662 Datasheet - Toshiba Semiconductor

2SD1662 Silicon NPN Transistor

2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1662 High Current Switching Applications Unit: mm High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A) Monolithic construction with built-in base-emitter shunt resistor. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Bas.

2SD1662_ToshibaSemiconductor.pdf