2SD1662
Toshiba ↗ Semiconductor
101.38 KB
Silicon npn transistor.
2SD1662
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD1662
High Current Switching Applications
Unit: mm
.
📁 Related Datasheet
2SD1662 - Silicon NPN Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1662
DESCRIPTION ·High DC Current Gain
: hFE= 1000(M.
2SD1663 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1300V (Min.) ·High Switching Speed ·Wide Area of Saf.
2SD1664 - Medium Power Transistor
(Rohm)
Medium Power Transistor (32V, 1A)
2SD1664 / 2SD1858
Features 1) Low VCE(sat) = 0.15V(Typ.)
(lC / lB = 500mA / 50mA) 2) Compliments 2SB1132 / 2SB1237.
2SD1664 - 1A Medium Power Silicon Transistor
(FASTSTAR SEMICONDUCTOR)
32V,1A Medium Power Silicon Transistor(NPN)
2SD1664
FEATURES :
z Low saturation voltage:VCE(sat)=0.15V(typ.) (IC/iB=500mA/50mA)
z PC=0.5W(Mounted on.
2SD1664 - MEDIUM POWER NPN TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SD1664
NPN SILICON TRANSISTOR
MEDIUM POWER NPN TRANSISTOR
DESCRIPTION
The UTC 2SD1664 is an epitaxial planar typ.
2SD1664 - NPN Silicon General Purpose Transistor
(SeCoS)
2SD1664
Elektronische Bauelemente
R o H S C o m p lia n t P ro d u c t
D D1 A
NPN Silicon General Purpose Transistor
Features
SOT-89
E1
b1
1
L
P.
2SD1664 - NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR
(AiT Semiconductor)
AiT Semiconductor Inc.
.ait-ic.
2SD1664
GENERAL PURPOSE TRANSISTOR NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR
DESCRIPTION
The 2SD1664 is av.
2SD1664-HF - NPN Transistors
(Kexin)
SMD Type
NPN Transistors 2SD1664-HF
Transistors
Features
Low VCE(sat) Compliments to 2SB1132-HF ● Pb−Free Package May be Available. The G−Suffix De.
