2SD1662 Datasheet - Toshiba Semiconductor

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2SD1662 Silicon NPN Transistor

2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1662 High Current Switching Applications Unit: mm .

2SD1662_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SD1662

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

101.38 KB

Description:

Silicon NPN Transistor

Applications

* Unit: mm
* High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A)
* Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)
* Monolithic construction with built-in base-emitter shunt resistor. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Col

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2SD1662 Silicon NPN Transistor Toshiba Semiconductor

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