2SD1663 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Collector-Base Breakdown Voltage- : V(BR)CBO= 1300V (Min. High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lo.

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Datasheet Specifications

Part number: 2SD1663
Manufacturer: Inchange Semiconductor
File Size: 208.77 KB
Datasheet: 2SD1663_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector- Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.7 V IC Collector Current-Cont

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2SD1663 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1663-like datasheet