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2SD1663 Datasheet - Inchange Semiconductor

2SD1663 Power Transistor

*High Collector-Base Breakdown Voltage- : V(BR)CBO= 1300V (Min.) *High Switching Speed *Wide Area of Safe Operation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power switching applications. ABSOLUTE MAXIMUM RATIN.

2SD1663_InchangeSemiconductor.pdf

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Part number:

2SD1663

Manufacturer:

Inchange Semiconductor

File Size:

208.77 KB

Description:

Power transistor.

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2SD1663 2SD1663 Power Transistor Inchange Semiconductor

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