2SD1663 Datasheet, Transistor, Inchange Semiconductor

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2SD1663

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Inchange Semiconductor

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📄 Datasheet

Description:

Power transistor.

High Collector-Base Breakdown Voltage- : V(BR)CBO= 1300V (Min.)

High Switching Speed

Wide Area of Safe Ope

2SD1663 Application

• Applications
• Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-

TAGS

2SD1663

Inchange Semiconductor

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