Datasheet Details
| Part number | 2SD1666 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 209.89 KB |
| Description | NPN Transistor |
| Datasheet |
|
| Part number | 2SD1666 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 209.89 KB |
| Description | NPN Transistor |
| Datasheet |
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SB1133 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and general purpose amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltag
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