2SD1666 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2SB.

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Datasheet Specifications

Part number: 2SD1666
Manufacturer: INCHANGE
File Size: 209.89 KB
Datasheet: 2SD1666-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Co

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2SD1666 NPN Transistor INCHANGE

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