2SD1606 Datasheet, Transistor, Inchange Semiconductor

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2SD1606

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Inchange Semiconductor

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📄 Datasheet

Description:

Silicon npn power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)

High DC Current Gain : hFE= 1000(Min) @IC= 3A

M

2SD1606 Application

• Applications
• Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V

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2SD1606

Inchange Semiconductor

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