2SD1606 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 3A. Minimum Lot-to-Lot variations.

📥 Download Datasheet

2SD1606 Datasheet Preview — Preview of 2SD1606 PDF

Datasheet Specifications

Part number: 2SD1606
Manufacturer: Inchange Semiconductor
File Size: 210.40 KB
Datasheet: 2SD1606-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICP Collector Cu

2SD1606 Distributors

📁 Related Datasheet

2SD1600 2SD1603 2SD1604 2SD1607 2SD1609 2SD1610

📌 All Tags

2SD1606 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1606-like datasheet