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2SD1606 - Silicon NPN Power Transistor

2SD1606 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 3A. Minimum Lot-to-Lot variations.

2SD1606 Applications

* Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICP Collector Cu

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Datasheet Details

Part number
2SD1606
Manufacturer
Inchange Semiconductor
File Size
210.40 KB
Datasheet
2SD1606-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD1606-like datasheet