2SD1606 Datasheet - Inchange Semiconductor

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2SD1606 Silicon NPN Power Transistor

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 3A. Minimum Lot-to-Lot variations.

2SD1606-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD1606

Manufacturer:

Inchange Semiconductor

File Size:

210.40 KB

Description:

Silicon NPN Power Transistor

Applications

* Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICP Collector Cu

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2SD1606 Silicon NPN Power Transistor Inchange Semiconductor

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