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2SD1606 Datasheet - Inchange Semiconductor

2SD1606 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) *High DC Current Gain : hFE= 1000(Min) @IC= 3A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RAT.

2SD1606-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD1606

Manufacturer:

Inchange Semiconductor

File Size:

210.40 KB

Description:

Silicon npn power transistor.

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2SD1606 2SD1606 Silicon NPN Power Transistor Inchange Semiconductor

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