* 0.45
* 0.1 +0.2 0.45
* 0.1 1.27 +0.2 V mA mA mW ˚C ˚C 1 2 3 2.3±0.2 V 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO
* 92 EIAJ:SC
* 43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter
2SD1010
Panasonic Semiconductor
38.47 KB
Npn transistor.
Transistor
2SD1010
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
5.0±0.2 4.0±0.2
q q q q
s Absolute Maximum Ratings
Pa.
📁 Related Datasheet
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(Panasonic Semiconductor)
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2SD1012 - NPN TRANSISTOR
(Sanyo Semicon Device)
Ordering number : EN0676F
2SD1012
SANYO Semiconductors
DATA SHEET
2SD1012
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Parameter Collector-to-Base Voltage Collector-to-Emitter V.
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Ordering number : EN0676F
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15V, 0.7A, Low VCE(sat), NPN Single SPA
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Absolute Maximum Ratings at Ta=25°C
Parame.
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isc Silicon NPN Power Transistor
isc Product Specification
2SD1016
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SMD Type
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World standard miniature package:SOT-89. Low collector saturation voltage.
A.
2SD1001 - NPN TRANSISTOR
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