2SD1010 Datasheet (Panasonic Semiconductor)

2SD1010, NPN TRANSISTOR

Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 q q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 50 40 15 100 50 300 150 55 ~ +150 Unit V 1.27 13.5±0.5 High foward current transfer

2SD1010 Features

* 0.45

* 0.1 +0.2 0.45

* 0.1 1.27 +0.2 V mA mA mW ˚C ˚C 1 2 3 2.3±0.2 V 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO

* 92 EIAJ:SC

* 43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter