2SD1590 Silicon NPN Darlington Power Transistor

Inchange Semiconductor Company

Description

isc Silicon NPN Darlington Power Transistor 2SD1590 .
Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC Current Gain : hFE= 2000(Min) @ IC= 3A. Complement to Type 2.

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Datasheet Specifications

Part number: 2SD1590
Manufacturer: Inchange Semiconductor Company
File Size: 217.14 KB
Datasheet: 2SD1590_InchangeSemiconductorCompany.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for audio frequency power amplifier and low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuo

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2SD1590 Silicon NPN Darlington Power Transistor Inchange Semiconductor Company

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