2SD1500 Datasheet - Inchange Semiconductor

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2SD1500 Power Transistor

isc Silicon NPN Darlington Power Transistor 2SD1500 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 10A. Low Saturation Voltage. M.

2SD1500_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD1500

Manufacturer:

Inchange Semiconductor

File Size:

210.26 KB

Description:

Power Transistor

Applications

* Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A IB Base Current-Continu

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2SD1500 Power Transistor Inchange Semiconductor

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