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2SD1500 Datasheet - Inchange Semiconductor

2SD1500 Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) *High DC Current Gain : hFE= 1000(Min) @IC= 10A *Low Saturation Voltage *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for high current switching applications. .

2SD1500_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD1500

Manufacturer:

Inchange Semiconductor

File Size:

210.26 KB

Description:

Power transistor.

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2SD1500 2SD1500 Power Transistor Inchange Semiconductor

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