2SD1510 Datasheet - INCHANGE

2SD1510, NPN Transistor

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1510 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V. Fast Switching Speed.

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2SD1510-INCHANGE.pdf

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Datasheet Details

Part number:

2SD1510

Manufacturer:

INCHANGE

File Size:

183.96 KB

Description:

NPN Transistor

Applications

* Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Collector Power

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2SD1510 NPN Transistor INCHANGE

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