2SD1510 - NPN Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V *Fast Switching Speed *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Power amplifier applications ABSOLUTE MAXIM
