2SD1510 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1510 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V. Fast Switching Speed.

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Datasheet Specifications

Part number: 2SD1510
Manufacturer: INCHANGE
File Size: 183.96 KB
Datasheet: 2SD1510-INCHANGE.pdf
Description: NPN Transistor

Applications

* Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Collector Power

2SD1510 Distributors

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2SD1510 NPN Transistor INCHANGE

INCHANGE 2SD1510-like datasheet