2SD1522 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1522 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min). High DC Current Gain : hFE= 500(Min) @ IC= 5A, VCE= 3V. Fast Switching Speed.

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Datasheet Specifications

Part number: 2SD1522
Manufacturer: INCHANGE
File Size: 201.98 KB
Datasheet: 2SD1522-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for audio frequency power amplifier and low speed high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collec

2SD1522 Distributors

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2SD1522 NPN Transistor INCHANGE

INCHANGE 2SD1522-like datasheet