Datasheet4U Logo Datasheet4U.com

2SD1522 - NPN Transistor

2SD1522 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1522 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min). High DC Current Gain : hFE= 500(Min) @ IC= 5A, VCE= 3V. Fast Switching Speed.

2SD1522 Applications

* Designed for audio frequency power amplifier and low speed high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collec

📥 Download Datasheet

Preview of 2SD1522 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD1522
Manufacturer
INCHANGE
File Size
201.98 KB
Datasheet
2SD1522-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD1520 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1520L - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1520S - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1521 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1525 - NPN Transistor (Toshiba Semiconductor)
  • 2SD1527 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1528 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD1500 - Power Transistor (Inchange Semiconductor)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD1522-like datasheet