2SD1525 Datasheet - Toshiba Semiconductor

2SD1525 NPN Transistor

2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1525 High Current Switching Applications Unit: mm High collector current: IC = 30 A High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) Monolithic construction with built-in base-emitter shunt resistor. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipatio.

2SD1525_ToshibaSemiconductor.pdf