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2SD1523 - NPN Transistor

2SD1523 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1523 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min). High DC Current Gain : hFE= 500(Min) @ IC= 8A, VCE= 3V. Fast Switching Speed.

2SD1523 Applications

* Designed for audio frequency power amplifier and low speed high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collec

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Datasheet Details

Part number
2SD1523
Manufacturer
INCHANGE
File Size
204.94 KB
Datasheet
2SD1523-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1523-like datasheet