2SD1515 - NPN Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) *High DC Current Gain : hFE= 1000(Min) @ IC= 10A, VCE= 3V *Fast Switching Speed *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low frequency power amplifie
