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2SD1515 - NPN Transistor

2SD1515 Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1515 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). High DC Current Gain : hFE= 1000(Min) @ IC= 10A, VCE= 3V. Fast Switching Spee.

2SD1515 Applications

* Designed for low frequency power amplifier and high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous

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Datasheet Details

Part number
2SD1515
Manufacturer
INCHANGE
File Size
203.84 KB
Datasheet
2SD1515-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1515-like datasheet