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2SD1515 - NPN Transistor

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Part number 2SD1515
Manufacturer INCHANGE
File Size 203.84 KB
Description NPN Transistor
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) High DC Current Gain : hFE= 1000(Min) @ IC= 10A, VCE= 3V Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and high current switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter

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