2SD1518 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device pe.

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Datasheet Specifications

Part number: 2SD1518
Manufacturer: Inchange Semiconductor
File Size: 215.58 KB
Datasheet: 2SD1518_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 6 A ICM Collector

2SD1518 Distributors

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2SD1518 Power Transistor Inchange Semiconductor

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