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2SD1518 - Power Transistor

2SD1518 Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device pe.

2SD1518 Applications

* Switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 6 A ICM Collector

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Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD1518-like datasheet