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2SD1525 Datasheet - Inchange Semiconductor

2SD1525 - Silicon NPN Darlington Power Transistor

*High DC Current Gain : hFE= 1000(Min.)@ IC= 20A *Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for high current switching applications.

ABSOLUTE MAXIMUM RATINGS

2SD1525_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD1525

Manufacturer:

Inchange Semiconductor

File Size:

213.89 KB

Description:

Silicon npn darlington power transistor.

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