2SD1525 Silicon NPN Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain : hFE= 1000(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min. Minimum Lot-to-Lot variati.

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Datasheet Specifications

Part number: 2SD1525
Manufacturer: Inchange Semiconductor
File Size: 213.89 KB
Datasheet: 2SD1525_InchangeSemiconductor.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 30 A IB Base Current- Continuous

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2SD1525 Silicon NPN Darlington Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1525-like datasheet