2SD1525 - Silicon NPN Darlington Power Transistor
*High DC Current Gain : hFE= 1000(Min.)@ IC= 20A *Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS
