2SD1509 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor 2SD1509 .
High DC Current Gain- : hFE = 2000(Min)@ IC= 1A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min). Low Collector-Emitter Satu.

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Datasheet Specifications

Part number: 2SD1509
Manufacturer: Inchange Semiconductor
File Size: 211.85 KB
Datasheet: 2SD1509-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 2 A

2SD1509 Distributors

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2SD1509 Silicon NPN Power Transistor Inchange Semiconductor

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