2SD1517 Datasheet - Inchange Semiconductor

2SD1517, Power Transistor

isc Silicon NPN Power Transistor .
Low Collector Saturation Voltage : VCE(sat)= 0. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min). Good Linearit.

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Datasheet Details

Part number:

2SD1517

Manufacturer:

Inchange Semiconductor

File Size:

216.18 KB

Description:

Power Transistor

Applications

* Designed for power amplifier,power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Cu

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2SD1517 Power Transistor Inchange Semiconductor

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