2SD1517 - Power Transistor
*Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) *Good Linearity of hFE *High Speed Switching *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed
