2SD1514 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1514 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High DC Current Gain : hFE= 1000(Min) @ IC= 10A, VCE= 3V. Fast Switching Spee.

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Datasheet Specifications

Part number: 2SD1514
Manufacturer: INCHANGE
File Size: 204.06 KB
Datasheet: 2SD1514-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency power amplifier and high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous

2SD1514 Distributors

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2SD1514 NPN Transistor INCHANGE

INCHANGE 2SD1514-like datasheet