Datasheet4U Logo Datasheet4U.com

2SD1514 - NPN Transistor

2SD1514 Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1514 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High DC Current Gain : hFE= 1000(Min) @ IC= 10A, VCE= 3V. Fast Switching Spee.

2SD1514 Applications

* Designed for low frequency power amplifier and high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous

📥 Download Datasheet

Preview of 2SD1514 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
2SD1514
Manufacturer
INCHANGE
File Size
204.06 KB
Datasheet
2SD1514-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD1511 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1513 - NPN Silicon Transistor (NEC)
  • 2SD1516 - Silicon NPN Transistor (Inchange Semiconductor)
  • 2SD1517 - Power Transistor (Inchange Semiconductor)
  • 2SD1518 - Power Transistor (Inchange Semiconductor)
  • 2SD1500 - Power Transistor (Inchange Semiconductor)
  • 2SD1504 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1505 - SILICON POWER TRANSISTOR (SavantIC)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD1514-like datasheet