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2SD1126 Datasheet - Inchange Semiconductor

2SD1126 Silicon NPN Darlington Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) *High DC Current Gain : hFE= 1000(Min) @IC= 5A *Low Saturation Voltage *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power switching applications. ABSOLUT.

2SD1126 Datasheet (209.24 KB)

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Datasheet Details

Part number:

2SD1126

Manufacturer:

Inchange Semiconductor

File Size:

209.24 KB

Description:

Silicon npn darlington power transistor.

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2SD1126 Silicon NPN Darlington Power Transistor Inchange Semiconductor

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