2SD1126 Silicon NPN Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor 2SD1126 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 5A. Low Saturation Voltage. Mi.

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Datasheet Specifications

Part number: 2SD1126
Manufacturer: Inchange Semiconductor
File Size: 209.24 KB
Datasheet: 2SD1126_InchangeSemiconductor.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak PC

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2SD1126 Silicon NPN Darlington Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1126-like datasheet