Datasheet4U Logo Datasheet4U.com

2SD1139 NPN Transistor

📥 Download Datasheet  Datasheet Preview Page 1

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1139 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min). Wide Area of Safe Operation. 100% avalanche tested. Minimum Lot-to-.

📥 Download Datasheet

Preview of 2SD1139 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Specifications

Part number
2SD1139
Manufacturer
INCHANGE
File Size
188.86 KB
Datasheet
2SD1139-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continu

2SD1139 Distributors

📁 Related Datasheet

📌 All Tags

INCHANGE 2SD1139-like datasheet