Datasheet Details
- Part number
- 2SD1139
- Manufacturer
- INCHANGE
- File Size
- 188.86 KB
- Datasheet
- 2SD1139-INCHANGE.pdf
- Description
- NPN Transistor
2SD1139 Description
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1139 .
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V (Min).
Wide Area of Safe Operation.
100% avalanche tested.
Minimum Lot-to-.
2SD1139 Applications
* Designed for low frequency power amplifier TV vertical
deflection output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continu
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