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2SD1139 - NPN Transistor

2SD1139 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1139 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min). Wide Area of Safe Operation. 100% avalanche tested. Minimum Lot-to-.

2SD1139 Applications

* Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continu

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Datasheet Details

Part number
2SD1139
Manufacturer
INCHANGE
File Size
188.86 KB
Datasheet
2SD1139-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1139-like datasheet