2SD1298 Silicon NPN Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor 2SD1298 .
High DC Current Gain : hFE= 200(Min. High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min). Low Collector S.

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Datasheet Specifications

Part number: 2SD1298
Manufacturer: Inchange Semiconductor
File Size: 216.83 KB
Datasheet: 2SD1298-InchangeSemiconductor.pdf
Description: Silicon NPN Transistor

Applications

* Designed for audio frequency power amplifier and low speed high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collecto

2SD1298 Distributors

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2SD1298 Silicon NPN Transistor Inchange Semiconductor

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