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2SD1298 - Silicon NPN Transistor

2SD1298 Description

isc Silicon NPN Darlington Power Transistor 2SD1298 .
High DC Current Gain : hFE= 200(Min. High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min). Low Collector S.

2SD1298 Applications

* Designed for audio frequency power amplifier and low speed high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collecto

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Datasheet Details

Part number
2SD1298
Manufacturer
Inchange Semiconductor
File Size
216.83 KB
Datasheet
2SD1298-InchangeSemiconductor.pdf
Description
Silicon NPN Transistor

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Silicon NPN Transistor Inchange Semiconductor
Inchange Semiconductor 2SD1298-like datasheet