2SD1295 Datasheet (Panasonic Semiconductor)

2SD1295, Silicon PNP Transistor

Power Transistors 2SB968 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD1295 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max q q q Possible to solder the radiation fin directly to printed cicuit board High collector to emitter VCEO Large collector power dissipation PC 0.93±0.1 1.0± 0.1 0.1± 0.05 0.5± 0.1 0.75± 0.1 2.3± 0.1 4.6± 0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter v

2SD1295 Features

* 7.3± 0.1 1.8± 0.1 Unit µA µA µA V V

* 50

* 40 50 220

* 1

* 1.5 150 45 VCE(sat) VBE(sat) fT Cob V V MHz pF

* h FE Rank classification P 50 to 100 Q 80 to 160 R 120 to 220 Rank hFE 1 Power Transistors PC

* Ta 32

* 4.0 TC=Ta 28

* 3.5 2SB