Datasheet4U Logo Datasheet4U.com

2SD1297 - NPN Transistor

2SD1297 Description

isc Silicon NPN Darlington Power Transistor 2SD1297 .
High DC Current Gain : hFE= 1000(Min. High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min). Low Collector.

2SD1297 Applications

* Designed for audio frequency power amplifier and low speed high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collect

📥 Download Datasheet

Preview of 2SD1297 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD1297
Manufacturer
INCHANGE
File Size
216.82 KB
Datasheet
2SD1297-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD129 - (2SD129 / 2SD130) Silicon NPN Transistor (ETC)
  • 2SD1291 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1292 - NPN Transistor (Rohm)
  • 2SD1293M - NPN Transistor (Rohm)
  • 2SD1295 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SD1296 - Darlington Power Transistors (NEC)
  • 2SD1298 - Silicon NPN Transistor (Inchange Semiconductor)
  • 2SD1200 - NPN Silicon Transistor (ROHM)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD1297-like datasheet